Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-09T22:40:06.985Z Has data issue: false hasContentIssue false

Maxwellian Charge on Ferroelectric Domain Walls in KNBO3

Published online by Cambridge University Press:  02 July 2020

A. Krishnan
Affiliation:
NEC Research Institute, Inc.4 Independence Way, Princeton, NJ08540
M. M. J. Treacy
Affiliation:
NEC Research Institute, Inc.4 Independence Way, Princeton, NJ08540
M. E. Bisher
Affiliation:
NEC Research Institute, Inc.4 Independence Way, Princeton, NJ08540
P. Chandra
Affiliation:
NEC Research Institute, Inc.4 Independence Way, Princeton, NJ08540
P. B. Littlewood
Affiliation:
Cavendish Laboratory, Cambridge University, Cambridge, UK
Get access

Extract

Ferroelectrics are now being used as non-volatile memories, infrared detectors, phased array radar and optical switches. Although the development of commercial ferroelectric devices has advanced in recent years, we still do not have a clear understanding of the basic physics underpinning the behavior of actual ferroelectric devices. Trapped charge and oxygen vacancies are believed to strongly influence domain motion. In order to study these issues, we have designed an in situ TEM holder that can subject ferroelectric crystals to voltage, heat and UV irradiation. Preliminary results on BaTiO3 have been presented in previous reports.

In this study, bulk KNbO3 crystals were mechanically polished and thinned in hot orthophosphoric acid. The resulting thin flakes were attached to copper rings with conductive carbon paint, and electrical wires were glued to the copper rings which act as electrodes. The sample was placed in the cradle of the in situ TEM holder and examined in a Hitachi H9000NAR TEM.

Type
Ceramics & Minerals
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Tanaka, M. and Goro, H., Journal of the Physical Society of Japan, 19, 954970 (1964).CrossRefGoogle Scholar
2.Snoeck, E., Normand, L., Thorel, A., Roucau, C., Phase Transitions, 46, 7778 (1994).CrossRefGoogle Scholar
3.Krishnan, A. et al, MRS 1999, to appear in the Ferroelectric Symposium Proceedings.Google Scholar