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Image Simulation of Solid Xe Layers at an Interface of a Liquid Xe Inclusion and an Al matrix

Published online by Cambridge University Press:  02 July 2020

T. Fujii ,
U. Dahmen ,
E. Johnson ,
R.C. Birtcher ,
S.E. Donnelly  and
C. W. Allen
T. Fujii
Affiliation:
on leave from: Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
U. Dahmen
Affiliation:
on leave from: Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
E. Johnson
Affiliation:
Ørsted Laboratory, University of Copenhagen, Universitet sparken 5, DK-2100 Copenhagen, Denmark
R.C. Birtcher
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL60439-4838
S.E. Donnelly
Affiliation:
Joule Laboratory, University of Salford, Manchester, M 5 4WT, UK
C. W. Allen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL60439-4838
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Extract

Xe inclusions can be formed in an Al matrix by ion implantation. The inclusion size and state (solid, liquid or vapor) can be controlled by changing the total ion dose and implantation temperature. Inclusions below about 10nm in size have been reported to be solid with a face centered cubic structure and a lattice parameter of about 0.6nm. Small solid inclusions have cuboctahedral shapes bounded by {111} and to a lesser extent by {100} facet planes. Larger liquid inclusions maintain their facets on the {111} planes of Al but the {100} facets become rounded . It is found that high resolution images of these liquid Xe inclusions exhibit an unusual contrast effect similar to that previously observed for liquid Pb inclusions in Al. This contrast is limited to the {111} facets and could indicate the presence of a thin solid layer of Xe. In this work we investigate the origin of this contrast effect by HRTEM observation and image simulation.

Nanosized Xe precipitates were formed in an Al matrix by ion implantation with 35 keV Xe at 474K to a dose 5×1015 ions/cm2. Through focus series of high resolution electron micrographs in the <110> zone axis orientation were taken on the Berkeley ARM-1000 at an accelerating voltage of 800kV.

Type
High Resolution Electron Microscopy
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 198 - 199
Copyright
Copyright © Microscopy Society of America

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References

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6. This work is supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. DEAC03-76SF00098Google Scholar