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Exit Wave Reconstruction of Interfaces Between Zno Films and ScalmgO4 Substrates

Published online by Cambridge University Press:  02 July 2020

B. Wessler ,
A. Steinecker  and
W. Mader
B. Wessler
Affiliation:
Institut fur Anorganische Chemie, Universitat Bonn, 53117, Bonn, German
A. Steinecker
Affiliation:
Institut fur Anorganische Chemie, Universitat Bonn, 53117, Bonn, German
W. Mader
Affiliation:
Institut fur Anorganische Chemie, Universitat Bonn, 53117, Bonn, German
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Abstract

Epitaxial ZnO thin films were produced on basal plane ScAlMgO4 (SAM) by chemical solution deposition (CSD) (fig. 1). ZnO crystallizes in the wurtzite structure and ScAlMgO4 is isostructural to YbFe2O4, a layered structure shown in fig. 2. The crystallographic orientation relationship was observed by XRD using θ-2θ scans and off-axis φ scans to be (0001)zno ∥ (0001)SAM and zno ∥ SAM. The lattice mismatch between film and substrate is 0,09%.

For TEM observations in cross-sectional geometry two substrates were glued together with the epitaxial film surfaces. Electron transparent specimens were produced by standard methods of mechanical thinning and ion beam etching. The HRTEM investigations were performed on a Philips CM300 FEG electron microscope with Ultra-Twin lens operated at 300 kV. After correction of axial coma and two-fold astigmatism images were recorded on a slow-scan lk × lk CCD camera with a sampling of 0.0193 nm/pixel.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 252 - 253
Copyright
Copyright © Microscopy Society of America 2001

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