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Energy Dispersive Spectrometry Calibration of Fe and Co

Published online by Cambridge University Press:  02 July 2020

C.B. Vartuli ,
F.A. Stevie ,
B.M. Purcell ,
A. Scwhitter ,
B. Rossie ,
S. Brown ,
T.L. Shofner ,
S.D. Anderson ,
J.M. McKinley  and
R.B. Irwin
C.B. Vartuli
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
F.A. Stevie
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
B.M. Purcell
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
A. Scwhitter
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
B. Rossie
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
S. Brown
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
T.L. Shofner
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
S.D. Anderson
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
J.M. McKinley
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
R.B. Irwin
Affiliation:
Agere Systems, 9333 S John Young Parkway, Orlando, FL, 32819.
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Abstract

Energy Dispersive Spectrometry (EDS) is an ubiquitous method of elemental analysis for SEM, TEM, and STEM applications. The elements of interest are generally quantified without standards using theoretical calculations or by using standards that are high purity specimens of the elements measured. However, EDS is often used to determine a small percentage of an element in a matrix. The accuracy and limit of detection of these low concentration measurements has not been established. An earlier report proved the concept that a cross section high dose BF2 implanted specimen could provide a standard for EDS measurement of F. This study extends this quantification approach to transition elements of importance to the semiconductor industry.

The Fe and Co standards were created by high dose ion implantation. For ions implanted into silicon, a dose of lxl016 atoms/cm2 results in a peak concentration of approximately lxl021 atoms/cm3 or 2% atomic. The exact concentration can be determined using methods such as Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS).

Type
Quantitative STEM: Imaging and EELS Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 200 - 201
Copyright
Copyright © Microscopy Society of America 2001

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References

references

1.Vartuli, C. B., et al., Microscopy and Microanalysis 2000 Proceedings, Springer (2000)536.Google Scholar
2.Giannuzzi, L. A., et al., Materials Research Society Symposium Proceedings, 480, 19 (1997).CrossRefGoogle Scholar