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Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells

Published online by Cambridge University Press:  02 July 2020

V. J. Keast
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ, UK.
N. Sharma
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ, UK.
M. Kappers
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ, UK.
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ, UK.
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Abstract

In the last 6-7 years there has been considerable experimental and theoretical interest in GaN and its alloys for use in light emitting applications. GaN is a direct gap semiconductor with a bandgap at ∼ 3.4 eV. When alloyed with in and/or Al the bandgap can be tuned to any wavelength ranging from UV to red. to further the development of GaN based devices, reliable methods are required to measure and predict the optical and electronic properties. EELS is one of the few techniques that can study these properties with high spatial resolution (< 1 nm) if a small electron probe is used, such as that in a scanning transmission electron microscope (STEM). High spatial resolution is necessary as, to improve efficiency, devices are normally based on quantum well structures.

Type
EELS Microanalysis at High Sensitivity: Advances in Spectrum Imaging, Energy Filtering and Detection (Organized by R. Leapman and J. Bruley)
Copyright
Copyright © Microscopy Society of America 2001

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References

[1] Program courtesy of Yuan, J.. Menon, N. K. and Yuan, J., Ultramicroscopy 74 (1998) 83.Google Scholar