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Early Results from an Aberration-Corrected JEOL 2200FS STEM/TEM at Oak Ridge National Laboratory

Published online by Cambridge University Press:  11 October 2006

Douglas A. Blom
Affiliation:
Oak Ridge National Laboratory, Materials Science & Technology Division, 1 Bethel Valley Road, Oak Ridge, TN 37831–6064, USA
Lawrence F. Allard
Affiliation:
Oak Ridge National Laboratory, Materials Science & Technology Division, 1 Bethel Valley Road, Oak Ridge, TN 37831–6064, USA
Satoshi Mishina
Affiliation:
JEOL USA, 11 Dearborn Rd., Peabody, MA 01960, USA
Michael A. O'Keefe
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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Abstract

The resolution-limiting aberrations of round electromagnetic lenses can now be successfully overcome via the use of multipole element “aberration correctors.” The installation and performance of a hexapole-based corrector (CEOS GmbH) integrated on the probe-forming side of a JEOL 2200FS FEG STEM/TEM is described. For the resolution of the microscope not to be severely compromised by its environment, a new, specially designed building at Oak Ridge National Laboratory has been built. The Advanced Microscopy Laboratory was designed with the goal of providing a suitable location for aberration-corrected electron microscopes. Construction methods and performance of the building are discussed in the context of the performance of the microscope. Initial performance of the microscope on relevant specimens and modifications made to eliminate resolution-limiting conditions are also discussed.

Type
Research Article
Copyright
© 2006 Microscopy Society of America

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References

REFERENCES

Batson, P.E. (2003). Aberration correction results in the IBM STEM instrument. Ultramicroscopy 96, 239249.Google Scholar
Batson, P.E., Dellby, N., & Krivanek, O.L. (2002). Sub-Ångstrom resolution using aberration corrected electron optics. Nature 418, 617620.Google Scholar
Fung, A.S., Tooley, P.A., Kelley, M.J., Koningsberger, D.C., & Gates, B.C. (1991). Cationic trirhenium rafts on γ-Al2O3: Characterization by X-ray absorption spectroscopy. J Phys Chem 95, 225234.Google Scholar
Haider, M., Uhlemann, S., & Zach, J. (2000). Upper limits for the residual aberrations of a high-resolution aberration-corrected STEM. Ultramicroscopy 81, 163175.Google Scholar
Huggins, D.K., Fellmann, W., Smith, J.M., & Kaesz, H.D. (1964). A polynuclear tetracarbonyl hydride of rhenium. Preparation and properties. J Am Chem Soc 86, 48414846.Google Scholar
Lin, J.A. & Cowley, J.M. (1986). Calibration of the operating parameters for an HB5 STEM instrument. Ultramicroscopy 19, 3142.Google Scholar
Liu, J. (2004). Advanced electron microscopy characterization of nanostructured heterogeneous catalysts. Microsc Microanal 10, 551576.Google Scholar
O'Keefe, M.A., Allard, L.F., & Blom, D.A. (2005a). HRTEM imaging of atoms at sub-Ångstrom resolution. J Electron Microsc 54, 169.Google Scholar
O'Keefe, M.A., Allard, L.F., & Blom, D.A. (2005b). Resolution quality and atom positions in sub-Ångstrom electron microscopy. Microsc Microanal 11, 540CD.Google Scholar
O'Keefe, M.A., Turner, J.H., Musante, J.A., Hetherington, C.J.D., Cullis, A.G., Carragher, B., Jenkins, R., Milgrim, J., Milligan, R.A., Potter, C.S., Allard, L.F., Blom, D.A., Degenhardt, L., & Sides, W.H. (2004). Laboratory design for high-performance electron microscopy. Microsc Today 12, 814.Google Scholar
Sohlberg, K., Rashkeev, S., Borisevich, A.Y., Pennycook, S.J., & Pantelides, S.T. (2004). Origin of anomalous Pt-Pt distances in the Pt/alumina catalytic system. ChemPhysChem 5, 18931897.Google Scholar
van Benthem, K., Lupini, A.R., Kim, M., Baik, H.S., Doh, S., Lee, J.-H., Oxley, M.P., Findlay, S.D., Allen, L.J., Luck, J., & Pennycook, S.J. (2005). Three-dimensional imaging of individual hafnium atoms inside a semiconductor device. Appl Phys Lett 87, 034104.Google Scholar
Wang, S., Borisevich, A.Y., Rashkeev, S.N., Glazoff, M.V., Sohlberg, K., Pennycook, S.J., & Pantelides, S.T. (2004). Dopants adsorbed as single atoms prevent degradation of catalysts. Nat Mater 3, 143146.Google Scholar