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Compositional Characterization of an O-N-O Layer in a Dram Using FE-(S)TEM And EELS

Published online by Cambridge University Press:  02 July 2020

M. Kawasaki ,
T. Oikawa ,
K. Ibe ,
K. H. Park ,
M. Shiojiri  and
M. Kersker
M. Kawasaki
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
T. Oikawa
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. Ibe
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. H. Park
Affiliation:
Texas Instrument Inc., 13570 North Central Expressway, MS3740, Dallas, TX, 75243
M. Shiojiri
Affiliation:
Kyoto Institute of Technology, Matsugasaki, Goshokaido, Sakyo, Kyoto 606, Japan
M. Kersker
Affiliation:
JEOL USA Inc., 11 Dearborn Road, Peabody, MA, 01960
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Extract

An O-N-O layer within a DRAM is designed to be an insulator between a single-crystal silicon substrate and a poly-crystalline silicon gate. The nominal structure of the layer is SiO2-Si3N4-SiO2. It has been reported that oxygen and nitrogen diffuse into each other layer while preserving the three layered structure. In order to measure the elemental distribution quantitatively, EELS was used for Si and light elements O and N in this study.

The specimen was cut from a 16M-DRAM device and prepared for TEM observation by the crosssection ion milling method. The O-N-O layer was analyzed using a JEM-201 OF FE-(S)TEM equipped with a scanning imaging device including a High-Angle Annular Dark Field(HAADF) detector which is capable of collecting electrons scattered 50 to 110 mrad, and also a PEELS(GATAN model 676). Fig. 1 shows a HAADF image of the O-N-O layer.

Type
Compositional Mapping With High Spatial Resolution
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 150 - 151
Copyright
Copyright © Microscopy Society of America

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References

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