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Comparison of Cliff–Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films

Published online by Cambridge University Press:  31 May 2018

Andrea Parisini Open the ORCID record for Andrea Parisini [Opens in a new window] ,
Stefano Frabboni ,
Gian Carlo Gazzadi ,
Rodolfo Rosa  and
Aldo Armigliato
Andrea Parisini*
Affiliation:
CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna, Italy
Stefano Frabboni
Affiliation:
Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, via G. Campi 213/A, 41100 Modena, Italy CNR-Istituto di Nanoscienze-S3, via G. Campi 213/a, 41100 Modena, Italy
Gian Carlo Gazzadi
Affiliation:
CNR-Istituto di Nanoscienze-S3, via G. Campi 213/a, 41100 Modena, Italy
Rodolfo Rosa
Affiliation:
CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna, Italy
Aldo Armigliato
Affiliation:
CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna, Italy
*
* Author for correspondence: Andrea Parisini, E-mail: [email protected]
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Abstract

In this work, we compare the results of different Cliff–Lorimer (Cliff & Lorimer 1975) based methods in the case of a quantitative energy dispersive spectrometry investigation of light elements in ternary C–O–Si thin films. To determine the Cliff–Lorimer (C–L) k-factors, we fabricated, by focused ion beam, a standard consisting of a wedge lamella with a truncated tip, composed of two parallel SiO2 and 4H-SiC stripes. In 4H-SiC, it was not possible to obtain reliable k-factors from standard extrapolation methods owing to the strong CK-photon absorption. To overcome this problem, an extrapolation method exploiting the shape of the truncated tip of the lamella is proposed herein. The k-factors thus determined, were then used in an application of the C–L quantification procedure to a defect found at the SiO2/4H-SiC interface in the channel region of a metal-oxide field-effect-transistor device. As in this procedure, the sample thickness is required, a method to determine this quantity from the averaged and normalized scanning transmission electron microscopy intensity is also detailed. Monte Carlo simulations were used to investigate the discrepancy between experimental and theoretical k-factors and to bridge the gap between the k-factor and the Watanabe and Williams ζ-factor methods (Watanabe & Williams, 2006).

Keywords

FIB lamellaanalytical electron microscopyscanning transmission electron microscopysilicon carbidesilicon oxide
Type
Materials Science Applications
Information
Microscopy and Microanalysis , Volume 24 , Issue 3 , June 2018 , pp. 193 - 206
Copyright
© Microscopy Society of America 2018 

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Footnotes

Cite this article: Parisini A, Frabboni S, Gazzadi GC, Rosa R and Armigliato A (2018) Comparison of Cliff–Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films. Microsc Microanal. 24(3): 193ȓ206 doi: 10.1017/S1431927618000259

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