Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-28T15:38:38.519Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Microlens Structures Fabricated in Cd1-xZnxTe and Cdte/Si IRFPA Substrate Materials

Published online by Cambridge University Press:  02 July 2020

P.R. Boyd ,
U. Lee ,
J. Little ,
D. Morton ,
A.J. Stoltz ,
J.D. Benson ,
M. Martinka ,
J.H. Dinan  and
M.R. Banish
P.R. Boyd
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD , 20783
U. Lee
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD , 20783
J. Little
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD , 20783
D. Morton
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD , 20783
A.J. Stoltz
Affiliation:
E-OIR Measurements, Inc., Spotsylvania, VA , 22553
J.D. Benson
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA , 22060
M. Martinka
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA , 22060
J.H. Dinan
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA , 22060
M.R. Banish
Affiliation:
SY Technology, Inc., Huntsville, AL , 35806
Get access

Abstract

The ternary II-VT alloy Hg1-xCdxTe has become the material of choice for many infrared detector applications. Current state of the art Hg1-xCdxTe infrared focal plane arrays (IRFPAs) are constructed as hybrid structures consisting of an epitaxial sensing layer of Hg1-xCdxTe on either a CdTe or Cd1-xZnxTe substrate, hybridized to a silicon readout circuit chip. For backside illuminated structures, like the typical infrared Hg1-xCdxTe detector array, multilayer antireflective coatings (AR) are required on the backside of the detector chip. The next generation of higher performance IRFPAs will be based on high densities of smaller detector pixels fabricated on large area monolithic heteroepitaxial substrate materials. Since the ultimate performance of photovoltaic diodes of this type is determined by the signal to noise ratio of the device, reducing the size of the pixels while lowering the undesirable noise currents in the devices also reduces the amount of signal generated by the diode.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 570 - 571
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Benson, J. D., et al., in Proceedings of the 1998 IRIS Specialty Group on Infrared Materials, NIST, Boulder, CO, 10–11 August 1998Google Scholar
2.Johnson, J. N., et al., in Proceedings of the 1998 IRIS Specialty Group on Infrared Materials, NIST, Boulder, CO, 10–11 August 1998Google Scholar
3.Keller, R.C., et al, J. Electron. Mat., 26, 6, (1997) 542–551CrossRefGoogle Scholar