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Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM

Published online by Cambridge University Press:  02 July 2020

B. Shea ,
Q. Sun-Paduano ,
D. F. Bliss ,
M. C. Callahan  and
C. Sung
B. Shea
Affiliation:
Department of Chemical and Nuclear Engineering, Center for Advanced Materials, University of Massachusetts, Lowell, MA01854
Q. Sun-Paduano
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA01731
D. F. Bliss
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA01731
M. C. Callahan
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA01731
C. Sung
Affiliation:
Department of Chemical and Nuclear Engineering, Center for Advanced Materials, University of Massachusetts, Lowell, MA01854
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Abstract

Interest in wide band gap III-V nitride semiconductor devices is increasing for optoelectronic and microelectronic device applications. to ensure the highest quality, TEM analysis can characterize the substrate and buffer layer interface. Measurements taken by TEM reveal the density of dislocations/cm2 and the orientation of Burger's vectors. This information allows for changes to be made in deposition rates, temperatures, gas flow rates, and other parameters during the processing.

The GaN/sapphire samples grown at AFRL were produced in two consecutive steps, first to provide a thin buffer layer, and the other to grow a lum thick epitaxial film. Both growth steps were prepared using metallic organic chemical vapor deposition (MOCVD) in a vertical reactor. Buffer layers were prepared using a range of temperatures from 525 to 535°C and with a range of flow rates and pressures in order to optimize the nucleation conditions for the epitaxial films.

Type
Applications of Microscopy: Surfaces/Interfaces
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 330 - 331
Copyright
Copyright © Microscopy Society of America 2001

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References

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