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Analysis of Electron Channeling Contrast of Stacking Faults in fcc Materials

Published online by Cambridge University Press:  22 January 2021

Ivan Gutierrez-Urrutia Open the ORCID record for Ivan Gutierrez-Urrutia [Opens in a new window]
Ivan Gutierrez-Urrutia*
Affiliation:
Research Center for Strategic Materials, National Institute for Materials Science, Tsukuba, Ibaraki305-0047, Japan
*
Author for correspondence: Ivan Gutierrez-Urrutia, E-mail: [email protected]
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Abstract

The characteristics of electron channeling contrast (ECC) of stacking faults in a [101] single-crystal 316L fcc (face-centered cubic) stainless steel have been evaluated. Channeling contrast was analyzed from a series of ECC images taken as a function of sample tilt at ~0.1° increments across the (111) Kikuchi band. The most relevant imaging parameters of the fault contrast, namely the number of fringes, fringe intensity, and fringe spacing, were analyzed under different channeling conditions. The present work shows that the channeling contrast of stacking faults exhibits strong dependence on the sign and magnitude of the deviation parameter, w (w = s ξg, where s is the excitation vector and ξg is the extinction distance). This effect has strong influence on channeling conditions for fault imaging and g.R analysis for determining the nature of a stacking fault. g.R analysis was evaluated by the method developed by Gevers et al. (1963) on g-reversion experiments of ECC images of a stacking fault configuration. The interplay between the stacking fault nature and ε-martensite is analyzed.

Keywords

electron channeling contrast imagingfcc materialsSEMstacking faults
Type
Software and Instrumentation
Information
Microscopy and Microanalysis , Volume 27 , Issue 2 , April 2021 , pp. 318 - 325
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

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