Published online by Cambridge University Press: 02 July 2020
In 1999 NCEM's One Ångstrom Microscope (OAM) became fully operational. The OAM is a Philips CM300 FEG/UT field emission microscope with holographic capabilities that is equipped with a Gatan Image Filter (GIF) and operates at 300 kV. It was designed to reach a resolution close to the “magic barrier” around one Ångstrom (100 pm) by combining mid voltage technology with advanced computer processing [1,2]. Ahardware correction of the three-fold astigmatism allows for aberration free imaging down to sub Ångstrom values [3]. In this contribution it will be shown that the instrument's performance exceeded expectations because sub Ångstrom resolution can be achieved by reconstructing electron exit waves from focal series [4].
Figure la depicts a simulated [110] lattice image of a 90° partial dislocation in silicon. Tersoff potentials were used to calculate the exact atomic positions around dislocations with different core structures [5].
1. O'Keefe, M.A. in “Microstructure of Materials”, Krishnan, K.M. Ed., San Francisco Press 1993, 121Google Scholar
2. van Dyck, D., Lichte, H., van der Mast, K.D., Ultramicroscopy 64, 1996, 1CrossRefGoogle Scholar
3. Wang, Y.C., Fitzgerald, A., Nelson, E.C., Song, C., O'Keefe, M.A., Kisielowski, C., Microscopy and Microanalyses 5, 1999, 822Google Scholar
4. Thust, A., Coene, W.M.J., Op de Beeck, M., Van Dyck, D., Ultramicroscopy 64, 1996, 211CrossRefGoogle Scholar
5. Lin, Karin, Chrzan, D.C et al. unpublished researchGoogle Scholar
6. Thust, A., Overwijk, M.H.F., Coene, W.M.J., Lentzen, M., Ultramicroscopy 64, 1996, 249CrossRefGoogle Scholar
7. Coene, W.M.J., Thust, A., Op de Beeck, M., Van Dyck, D., Ultramicroscopy 64, 1996, 109CrossRefGoogle Scholar