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Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation

Published online by Cambridge University Press:  06 January 2012

Minseo Park ,
V. Sakhrani ,
J-P. Maria ,
J. J. Cuomo ,
C. W. Teng ,
J. F. Muth ,
M. E. Ware ,
B. J. Rodriguez  and
R. J. Nemanich
Minseo Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
V. Sakhrani
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
J-P. Maria
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
J. J. Cuomo
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
C. W. Teng
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695
J. F. Muth
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695
M. E. Ware
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695
B. J. Rodriguez
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695
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Abstract

This study presents results of wavelength-dependent Raman scattering from amorphous silicon carbon (a-Si:C:H). The a-Si:C:H films were produced by radio-frequency plasma-enhanced chemical vapor deposition. Prior results with amorphous carbon indicate that laser excitation selectively probes clusters with differing sizes. Our measurements with a-Si:C:H indicate that when using red (632.8 nm), green (514.5 nm), and blue (488.0 nm) excitation, the Raman D and G peaks shift to higher wave numbers as the excitation energy increases. The higher frequency is associated with smaller clusters that are preferentially excited with higher photon energy. It appears that photoluminescence occurs due to radiative recombination from intracluster transitions in Si-alloyed sp2-bonded carbon clusters

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 768 - 771
Copyright
Copyright © Materials Research Society 2003

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References

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