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Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond

Published online by Cambridge University Press:  31 January 2011

Naira M. Balzaretti ,
Albert Feldman ,
Edgar S. Etz  and
Roy Gat
Naira M. Balzaretti
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Albert Feldman
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Edgar S. Etz
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Roy Gat
Affiliation:
Coatings Technology Solutions, Inc., Somerville, Massachusetts 02143
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Abstract

The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0.1–0.4 mm thick, were prepared in microwave-plasma reactor at growth rates ranging from 1 to 10 μm/h. A modification of Ångstöm's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the line shifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 9 , September 1999 , pp. 3720 - 3724
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Graebner, J.E., Jin, S., Kammlott, G.W., Herb, J.A., and Gardinier, C.F., Appl. Phys. Lett. 60, 1576 (1992).CrossRefGoogle Scholar
2.Herb, J.A., Bailey, C., Ravi, K.V., and Dennig, P.A., Electrochem. Soc. Proc. 89–12, 366 (1989).Google Scholar
3.Ono, A., Baba, T., Funamoto, H., and Nishikawa, A., Japan. J. Appl. Phys. 25, L808 (1986).CrossRefGoogle Scholar
4.Graebner, J.E., Mucha, J.A., Seibles, L., and Kammlott, G.W., J. Appl. Phys. 71, 3143 (1992).CrossRefGoogle Scholar
5.Feldman, A. and Balzaretti, N.M., Rev. Sci. Instrum. 69, 237 (1998).CrossRefGoogle Scholar
6.Parrott, J.E. and Stuckes, A.D., Thermal Conductivity of Solids (Pion, London, 1975), p. 24.Google Scholar
7.Field, J.E., The Properties of Diamond (Academic Press, London, 1979), p. 643.Google Scholar
8.Victor, A.C., J. Chem. Physics 36, 1903 (1962).CrossRefGoogle Scholar
9.Morelli, D.T., Beetz, C.P., and Perry, T.A., J. Appl. Phys. 64, 3063 (1988).CrossRefGoogle Scholar
10.Graebner, J.E., Jin, S., Kammlott, G.W., Wong, Y-H., Herb, J.A., and Gardinier, C.F., Diamond Relat. Mater. 2, 1059–1063 (1993).CrossRefGoogle Scholar
11.Bergman, L. and Nemanich, R.J., J. Appl. Phys. 78, 6709 (1995).CrossRefGoogle Scholar
12.Graebner, J.E., Reiss, M.E., Seibles, L., Hartnett, T.M., Miller, R.P., and Robinson, C.J., Phys. Rev. B 50, 3702 (1994).CrossRefGoogle Scholar