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Formation, microstructure, chemical long-range order, and stability of quasicrystals in Al–Pd–Mn alloys

Published online by Cambridge University Press:  31 January 2011

An-Pang Tsai ,
Yoshihiko Yokoyama ,
Akihisa Inoue  and
Tsuyoshi Masumoto
An-Pang Tsai
Affiliation:
Institute for Materials Research, Tohoku University, 980 Sendai, Japan
Yoshihiko Yokoyama
Affiliation:
Graduate School, Tohoku University, 980 Sendai, Japan
Akihisa Inoue
Affiliation:
Institute for Materials Research, Tohoku University, 980 Sendai, Japan
Tsuyoshi Masumoto
Affiliation:
Institute for Materials Research, Tohoku University, 980 Sendai, Japan
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Abstract

The icosahedral (i-) phases are found over a wide composition range in melt-quenched Al–Pd–Mn alloys. The i-phase has a simple icosahedral lattice in the low Pd content region (Pd <10 at. %) and transforms to a face-centered icosahedral with increasing Pd content (Pd >10 at. %). A decagonal phase with a periodicity of 1.6 nm exists at a low Mn content region. On the basis of the change in diffraction peak intensity, it was presumed that the chemical ordering between Al and Pd exists in a face-centered icosahedral lattice in which Pd and Mn occupy one superlattice site and Al occupies the other one. A dendritic growth morphology in a mixed structure containing i- and fcc Al phases changes to a planar growth morphology in a fully single i-phase. An interpretation of dependence of morphology on composition is given in terms of the interface stability criterion using a metastable i–Al phase diagram.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 12 , December 1991 , pp. 2646 - 2652
Copyright
Copyright © Materials Research Society 1991

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References

1.Shechrman, D., Blech, I A., Gratias, D., and Cahn, J. W., Phys. Rev. Lett. 53, 1951 (1984).CrossRefGoogle Scholar
2.Tsai, A. P., Inoue, A., and Masumoto, T., Jpn. J. Appl. Phys. 26, 1505 (1987).CrossRefGoogle Scholar
3.Tsai, A. P., Inoue, A., and Masumoto, T., Mater. Trans. Jpn. Inst. Metal. 30, 666 (1989).Google Scholar
4.Tsai, A. P., Inoue, A., and Masumoto, T., Jpn. J. Appl. Phys. 27, L1587 (1988).CrossRefGoogle Scholar
5.Ebalard, S. and Spaepen, F., J. Mater. Res. 4, 39 (1989).CrossRefGoogle Scholar
6.Tsai, A. P., Inoue, A., Yokoyama, Y., and Masumoto, T., Mater. Trans. Jpn. Inst. Metal. 31, 98 (1990).Google Scholar
7.Tsai, A. P., Yokoyama, Y., Inoue, A., and Masumoto, T., Jpn. J. Appl. Phys. 29, L1161 (1990).CrossRefGoogle Scholar
8.Chen, H. S., Koskenmaki, D., and Chen, C. H., Phys. Rev. B 35, 3715 (1987).CrossRefGoogle Scholar
9.Inoue, A., Tsai, A. P., Kimura, H. M., Bizen, Y., and Masumoto, T., J. Mater. Sci. Lett. 6, 771 (1987).CrossRefGoogle Scholar
10.Ma, L., Wang, R., and Kuo, K. H., Scripta Metall. 22, 1791 (1988).CrossRefGoogle Scholar
11.Tsai, A. P., Chen, H. S., Inoue, A., and Masumoto, T., Jpn. J. Appl Phys. 30, L1132 (1991).CrossRefGoogle Scholar
12.Mullins, W. and Sekerka, R. F., J. Appl. Phys. 35, 444 (1964).CrossRefGoogle Scholar
13.Coriell, S. R. and Sekerka, R. F., Rapid Solidification, Proceedings Principle and Technology, II, Reston, VA, edited by Mehrabian, R., Kear, B. H., and Cohen, M., Baton Rouge, LA (1980), p. 35.Google Scholar
14.Yu-;Zhang, K., Bigot, J., Martin, G., Portier, R., and Gratias, D., Proc. Xth Cong, on Electron Microscopy, Kyodo (1986), p. 167.Google Scholar
15.Calvayrac, Y., Devaud-;Repsk, J., Bessire, M., Lafebvre, S., Corntier-Quiquandon, M., and Gratias, D., J. Phys. France 51, 417 (1990).CrossRefGoogle Scholar
16.Inoue, A., Arnberg, L., Lehtinen, B., Oguchi, M., and Masumoto, T., Metall. Trans. 7A, 1657 (1986).CrossRefGoogle Scholar
17.Tsai, A. P., Chen, H. S., Inoue, A., and Masumoto, T., Phys. Rev. B 43, 8782 (1991).CrossRefGoogle Scholar
18.Tsai, A. P., Inoue, A., and Masumoto, T., J. Appl. Phys. 69, 2728 (1991).CrossRefGoogle Scholar
19.Hiraga, K., Hirabayashi, M., Inoue, A., and Masumoto, T., J. Microsc. 146, 245 (1987).CrossRefGoogle Scholar