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Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

Published online by Cambridge University Press:  01 December 2005

Y. Hong ,
U.B. Patri ,
S. Ramakrishnan ,
D. Roy  and
S.V. Babu
Y. Hong
Affiliation:
Interdisciplinary Engineering Science, Clarkson University, Potsdam, New York 13699-5665
U.B. Patri
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699-6650
S. Ramakrishnan
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699-6650
D. Roy
Affiliation:
Department of Physics, Clarkson University, Potsdam, New York 13699-5820
S.V. Babu*
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699-5665
*
a)Address all correspondence to this author. e-mail: [email protected] A preliminary report appears in Ref. 23.
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Abstract

An important component of the slurries used in chemical mechanical planarization (CMP) is an appropriately chosen corrosion/dissolution inhibitor, which facilitates selective material removal from protrusions while protecting recessed regions of the surface. The present work demonstrates the utility of two environmentally benign anionic surfactants, sodium dodecyl sulfate (SDS) and ammonium dodecyl sulfate (ADS) as dissolution inhibitors. Using a standard slurry (1 wt% glycine with 5 wt% H2O2 at pH = 4.0) typically used for Cu CMP and combining measurements of open circuit potentials and contact angles with those of Cu removal rates, we show that both SDS and ADS suppress chemical dissolution and polish rates of Cu. The dissolution inhibition efficiencies of ADS and SDS measured in these experiments are found to be superior to those of benzotriazole (BTA), a traditional inhibiting agent used for copper CMP.

Keywords

AdsorptionMicroelectronicsThin film
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 12 , December 2005 , pp. 3413 - 3424
Copyright
Copyright © Materials Research Society 2005

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