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Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by multi-sputtering method: Part I. Microstructural evolution

Published online by Cambridge University Press:  18 July 2011

Chee-Sung Park ,
Jae-Wung Lee ,
Gun-Tae Park ,
Hyoun-Ee Kim  and
Jong-Jin Choi
Chee-Sung Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jae-Wung Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Gun-Tae Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Hyoun-Ee Kim*
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jong-Jin Choi
Affiliation:
Department of Future Technology, Korea Institute of Machinery and Material, Chang-Won, Gyeong-Nam 641-831, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Thick and crack-free Pb(Zr,Ti)O3 [PZT] films were fabricated on platinized silicon substrates by a multisputtering technique. The PZT films were deposited on the Si substrate by the radio frequency magnetron sputtering method using a single oxide target. As the film became thicker, its grain size increased. Therefore, the microstructure of the film was able to be controlled by repeatedly depositing thin layers. In addition, by using a seed layer with the same composition but a much smaller grain size, it was possible to further reduce the grain size of the film. When the film had a small in-plane grain size and a fibrous columnar structure, it was highly resistant to cracking, presumably because of its enhanced strength and structural stability. By exploiting these phenomena, highly dense, crack-free, and thick PZT films were successfully deposited up to a thickness of about 5 μm. The evolution of the crystallographic orientation of the film as a function of its thickness was also observed and correlated with the total strain energy of the system.

Keywords

FerroelectricFilmMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1367 - 1372
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Yanakawa, K., Imai, K., Ariumi, O., Arikado, T., Yoshioka, M., Owada, T., and Okumura, K.: Novel Pb(Ti,Zr)O3 (PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices. Jpn. J. Appl. Phys. 41, 2630 (2002).CrossRefGoogle Scholar
2Polla, D.L. and Francis, L.F.: Ferroelectric thin films in microelectromechanical systems applications. MRS Bull. 21, 59 (1996).CrossRefGoogle Scholar
3Spearing, S.M.: Materials issues in microelectromechanical systems (MEMS). Acta Mater. 48, 179 (2000).CrossRefGoogle Scholar
4Evans, A.G. and Hutchison, J.W.: The thermomechanical integrity of thin films and multilayers. Acta Metall. Mater. 43, 2507 (1995).CrossRefGoogle Scholar
5Zhou, Y.C., Yang, Z.Y., and Zheng, X.J.: Residual stress in PZT thin films prepared by pulsed laser deposition. Surf. Coat. Technol. 162, 202 (2003).CrossRefGoogle Scholar
6Park, G-T., Choi, J-J., Park, C-S., Lee, J-W., and Kim, H-E.: Piezoelectric and ferroelectric properties of 1-μm-thick lead zirconate titanate film fabricated by a double-spin coating process. Appl. Phys. Lett. 85, 2322 (2004).CrossRefGoogle Scholar
7Barrow, D.A., Petroff, T.E., Tandon, R.P., and Sayer, M.: Characterization of thick lead zirconate titanate films fabricated using a new sol gel-based process. J. Appl. Phys. 81, 876 (1997).CrossRefGoogle Scholar
8Yao, K., He, X., Xu, Y., and Chen, M.: Screen-printed piezoelectric ceramic thick films with sintering additives introduced through a liquid-phase approach. Sens. Actuators A 118, 342 (2005).CrossRefGoogle Scholar
9Thompson, C.V. and Carel, R.: Stress and grain growth in thin film. J. Mech. Phys. Solids 44, 657 (1996).CrossRefGoogle Scholar
10Thompson, C.V.: Structure evolution during processing of polycrystalline films. Annu. Rev. Mater. Sci. 30, 159 (2000).CrossRefGoogle Scholar
11Nix, W.D.: Mechanical properties of thin films. Metall. Trans. A 20A, 2217 (1989).CrossRefGoogle Scholar
12Mullins, W.W.: The effect of thermal grooving on grain boundary motion. Acta Metall. 6, 414 (1958).CrossRefGoogle Scholar
13Genin, F.Y.: Effect of stress on grain boundary motion in thin films. J. Appl. Phys. 77, 5130 (1995).CrossRefGoogle Scholar
14Klinger, L.M., Glickman, E.E., Fradkov, V.E., Mullins, W.W., and Bauer, C.L.: Extensions of thermal grooving for arbitrary grain-boundary flux. J. Appl. Phys. 78, 3833 (1995).CrossRefGoogle Scholar
15Choi, J-J., Park, G-T., Park, C-S., Lee, J-W., and Kim, H-E.: Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film. J. Mater. Res. 19, 3671 (2004).CrossRefGoogle Scholar
16Reaney, I.M., Brools, K., Klissurska, R., Pawlaczyk, C., and Setter, N.: Use of transmission electron microscopy for the characterization of rapid thermally annealed, solution-gel, lead zirconate titanate films. J. Am. Ceram. Soc. 77, 1209 (1994).CrossRefGoogle Scholar
17Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L., and Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).CrossRefGoogle Scholar
18Kalpat, S., Du, X., Abothu, I.R., Akiba, A., Goto, H., and Uchino, K.: Effect of crystal orientation on dielectric properties of lead zirconium titanate thin films prepared by reactive RF sputtering. Jpn. J. Appl. Phys. 40, 713 (2001).CrossRefGoogle Scholar