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Delamination-induced dielectric breakdown in Cu/low-k interconnects

Published online by Cambridge University Press:  31 January 2011

T.L. Tan ,
C.L. Gan ,
A.Y. Du ,
Y.C. Tan  and
C.M. Ng
T.L. Tan
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
C.L. Gan*
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
A.Y. Du
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Singapore 738406
Y.C. Tan
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Singapore 738406
C.M. Ng
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Singapore 738406
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Delamination at an interface with the weakest adhesion strength, which is found to be between the SiC(N) capping layer and the SiOCH low-k dielectric, is a potential failure mechanism contributing to time-dependent dielectric breakdown (TDDB) reliability. Bond breaking at that interface is believed to be driven by a field-enhanced thermal process and catalyzed by leakage current through the capping layer based on physical analyses and TDDB measurements. Delamination is found to be easier in terminated tips and corners than in parallel comb lines due to the layout orientation of the Cu lines. Moreover, TDDB activation energy Ea can be an indicator of the ease of delamination, whereby a lower Ea corresponds to an easier delamination.

Keywords

CuAdhesionDielectric
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1802 - 1808
Copyright
Copyright © Materials Research Society 2008

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References

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