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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

Published online by Cambridge University Press:  23 March 2010

Stéphane Piotrowicz ,
Erwan Morvan ,
Raphaël Aubry ,
Guillaume Callet ,
Eric Chartier ,
Christian Dua ,
Jérémy Dufraisse ,
Didier Floriot ,
Jean-Claude Jacquet  and
Olivier Jardel
...Show all authors
Stéphane Piotrowicz*
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Erwan Morvan
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Raphaël Aubry
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Guillaume Callet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Eric Chartier
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Christian Dua
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Jérémy Dufraisse
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Didier Floriot
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Jean-Claude Jacquet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Olivier Jardel
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Yves Mancuso
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Benoit Mallet-Guy
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Mourad Oualli
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Zineb Ouarch
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Marie-Antoinette Di-Forte Poisson
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Nicolas Sarazin
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Michel Stanislawiak
Affiliation:
THALES Air Systems, ZI du Mont Jarret, 76520 Ymare, France.
Sylvain Delage
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
*
Corresponding author: S. Piotrowicz Email: [email protected]
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Abstract

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

Keywords

GaNHEMTMMICPower amplifierLow noiseSwitch
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 105 - 114
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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