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Thermogravimetric analysis of the oxidation resistance of ZrB2–SiC and ZrB2–Sic–TaB2–based compositions in the 1500–1900 °C range

Published online by Cambridge University Press:  11 January 2011

Fei Peng ,
Gregg Van Laningham  and
Robert F. Speyer
Fei Peng
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Gregg Van Laningham
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Robert F. Speyer*
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Theoretically dense ZrB2–SiC two-phase microstructures were isothermally oxidized for ∼90 min in flowing air in the range 1500–1900 °C. Specimens with 30 mol% SiC formed distinctive reaction product layers that were highly protective; 28 mol% SiC–6 mol% TaB2 performed similarly. At and above 1700 °C, the composition with only 15 mol% SiC oxidized extensively because of deficient silicate liquid formation. Specimens with 60 mol% SiC were resistant to oxidation up to 1800 °C; at 1900 °C, this composition displayed periodic ruptures of the passivating layer by emerging gas bubbles. Oxide coating thicknesses calculated from weight loss data were consistent with those measured from scanning electron microscopy micrographs. A layer of ZrB2 devoid of SiC was argued to be from preferential removal of SiC by reaction of a silica oxidation product with adjacent unreacted SiC to form escaping gases.

Keywords

OxidationThermogravimetric analysis (TGA)Microstructure
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 1 , 14 January 2011 , pp. 96 - 107
Copyright
Copyright © Materials Research Society 2011

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